Title :
Convertible Transistor between Resonant Tunneling Transistor and Single Hole Transistor Using Single-Walled Carbon Nanotube
Author :
Kamimura, T. ; Ohno, Y. ; Matsumoto, K.
Author_Institution :
AIST, Tsukuba
Abstract :
We have succeeded in fabricating the convertible transistor which can operate as a resonant tunneling transistor (RTT) and also as a single hole transistor (SHT) using single-walled carbon nanotube (SWNT) by modulating the strength of the coupling between the electrode and the quantum island using the gate voltage change the thickness of Schottky barrier.
Keywords :
Schottky barriers; carbon nanotubes; resonant tunnelling transistors; C; Schottky barrier; convertible transistor; electrode; resonant tunneling transistor; single hole transistor; single-walled carbon nanotube; Carbon nanotubes; Electrodes; Energy states; Equations; Low voltage; Resonant tunneling devices; Schottky barriers; Shape; Temperature dependence; Wave functions;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800717
