• DocumentCode
    2982064
  • Title

    Convertible Transistor between Resonant Tunneling Transistor and Single Hole Transistor Using Single-Walled Carbon Nanotube

  • Author

    Kamimura, T. ; Ohno, Y. ; Matsumoto, K.

  • Author_Institution
    AIST, Tsukuba
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    We have succeeded in fabricating the convertible transistor which can operate as a resonant tunneling transistor (RTT) and also as a single hole transistor (SHT) using single-walled carbon nanotube (SWNT) by modulating the strength of the coupling between the electrode and the quantum island using the gate voltage change the thickness of Schottky barrier.
  • Keywords
    Schottky barriers; carbon nanotubes; resonant tunnelling transistors; C; Schottky barrier; convertible transistor; electrode; resonant tunneling transistor; single hole transistor; single-walled carbon nanotube; Carbon nanotubes; Electrodes; Energy states; Equations; Low voltage; Resonant tunneling devices; Schottky barriers; Shape; Temperature dependence; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800717
  • Filename
    4800717
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982064