DocumentCode
2982087
Title
Abnormal leakage suppression (ALS) scheme for low standby current SRAMs
Author
Kanda, K. ; Nguyen Duc Mihn ; Kawaguchi, H. ; Sakurai, T.
Author_Institution
Tokyo Univ., Japan
fYear
2001
fDate
7-7 Feb. 2001
Firstpage
174
Lastpage
175
Abstract
Abnormal leakage suppression (ALS) repairs standby current errors in SRAMs. By introducing leakage sensors, shift registers and fuses, ACS senses 1 /spl mu/A abnormal leakage, isolates the memory cell from VDD lines and thus suppresses abnormal leakage current. A 64 Kb test SRAM demonstrates effectiveness. Area overhead is 7%.
Keywords
SRAM chips; cellular arrays; electric fuses; leakage currents; shift registers; 64 Kbit; SRAMs; abnormal leakage suppression; area overhead; fuses; leakage sensors; memory cell; shift registers; standby current errors; Batteries; Circuit testing; Fuses; Leakage current; MOSFETs; Random access memory; Redundancy; Sensor fusion; Shift registers; Variable structure systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-6608-5
Type
conf
DOI
10.1109/ISSCC.2001.912592
Filename
912592
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