Theory of Multi-tube Carbon Nanotube Transistors for High Speed Variation-Tolerant Circuits

Author

Raychowdhury, Arijit ; Kurtin, Juanita ; Borkar, Shekhar ; De, Vivek ; Roy, Kaushik ; Keshavarzi, Ali

Author_Institution

Circuit Res. Labs., Intel Corp., Hillsboro, OR

fYear

2008

fDate

23-25 June 2008

Firstpage

23

Lastpage

24

Abstract

In this paper, a multi-tube transistor (MTx) structure is proposed to reduce the burden of technology development for fabricating perfectly ordered array of nanotubes. The proposed MTx architecture accounts for variations and non-idealities that occur in CNFETs. MTx with short transistor channel length operates differently from the long channel CNT-based TFTs where the carriers hop from tube to tube in a percolation network.

Keywords

carbon nanotubes; field effect transistors; nanoelectronics; nanofabrication; nanotube devices; CNFET; MTx architecture; high speed variation-tolerant circuits; long channel CNT-based TFT; multitube carbon nanotube transistor; percolation network; perfectly ordered nanotube array fabrication; short transistor channel length; Carbon nanotubes; Circuits; Current measurement; Degradation; Doping; Electrostatics; Inorganic materials; Organic materials; Semiconductivity; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800719

Filename

4800719