Title :
Epitaxial graphene transistors on SiC substrates
Author :
Kedzierski, Jakub ; Hsu, Pei-Lan ; Healey, Paul ; Wyatt, Peter ; Keast, Craig
Author_Institution :
MIT Lincoln Lab., Lexington, MA
Abstract :
Graphene holds great promise for future electronic technology. It has very high mobility even for thin films, and is compatible with high-k dielectrics. Thus while it is too early to speculate on graphene replacing silicon as the material of choice for electronics, the potential of carbon based devices should not be underestimated.
Keywords :
electrical conductivity; electron mobility; epitaxial layers; graphene; hole mobility; thin film transistors; C; SiC; electron mobility; epitaxial graphene transistors; high-k dielectric; hole mobility; minimum conduction; standard micro-electronics method; Dielectric substrates; Furnaces; Hafnium oxide; High-K gate dielectrics; Laboratories; Optical films; Photonic band gap; Silicon carbide; Solid state circuits; Transistors;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800720
