Ferroelectric non-volatile memory

Author

Evans, Joe ; Womack, Richard ; Toisch, D.

Author_Institution

Krysalis Corp., Albuquerque, NM, USA

fYear

1988

fDate

23-27 May 1988

Firstpage

65

Abstract

The development of a monolithic 512-bit ferroelectric nonvolatile memory addressed by CMOS circuitry is discussed. This development has demonstrated technical feasibility and has allowed the production of the first 16 K universal random access memory called UniRAM. The 16 K UniRAM is intended to have a 100-ns Read/Write access time, unlimited write capability, and function over the military temperature range. The device characteristics and future applications as related to the aerospace industry are discussed

Keywords

CMOS integrated circuits; ferroelectric devices; integrated memory circuits; random-access storage; 100 ns; 16 K universal random access memory; 16 kbits; 512 bits; CMOS circuitry; NVRAM; UniRAM; access time; aerospace industry; applications; device characteristics; ferroelectric nonvolatile memory; military temperature range; nonvolatile RAM; technical feasibility; unlimited write capability; write time; CMOS technology; Capacitors; Circuits; Ferroelectric materials; Iron; Magnetic cores; Nonvolatile memory; Random access memory; Space technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, 1988. NAECON 1988., Proceedings of the IEEE 1988 National

Conference_Location

Dayton, OH

Type

conf

DOI

10.1109/NAECON.1988.194996

Filename

194996