Title :
High-performance Inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as Gate Dielectric
Author :
Xuan, Y. ; Shen, T. ; Wu, Y.Q. ; Xu, Mengdi ; Ye, P.D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
In this paper, the authors have demonstrated high-performance inversion-type E-mode In0.65Ga0.35As MOSFETs using ALD high-k gate dielectrics such as ALD Al2O3 and HfO2 with a maximum inversion current as high as 1.05 A/mm and a peak transconductance of 0.37 S/mm. These results suggest In-rich InGaAs could be an ideal channel material which is easy to integrate with high-k dielectrics and has a higher electron effective mobility and a wide enough bandgap for low-power and high-speed CMOS applications.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; dielectric materials; electrical conductivity; electron mobility; energy gap; gallium arsenide; indium compounds; low-power electronics; In0.65Ga0.35As-Al2O3; In0.65Ga0.35As-HfO2; bandgap; electron effective mobility; gate dielectric; high-speed CMOS applications; inversion current; inversion-type E-mode n-channel MOSFETs; low-power applications; transconductance; Contact resistance; Dielectrics; Encapsulation; Hafnium oxide; III-V semiconductor materials; MOSFETs; Organic materials; Substrates; Threshold voltage; Transconductance;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800725
