DocumentCode :
2982232
Title :
Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3as gate dielectrics
Author :
Lin, T.D. ; Chen, Christine P. ; Chiu, H.C. ; Chang, Peter ; Lin, C.A. ; Hong, M. ; Kwo, J. ; Tsai, W.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
39
Lastpage :
40
Abstract :
The authors have successfully demonstrated self-aligned high-performance inversion-channel In0.53Ga0.47As MOSFETs using UHV-deposited nano-meter thick AI2O3/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In0.2Ga0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits very high current densities and transconductance.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; tin compounds; Al2O3-Ga2O3(Gd2O3); D-mode MOSFET; InGaAs; TiN; UHV-deposition; dual-layer dielectrics; gate dielectrics; metal gate; nano-meter thick dielectrics; self-aligned inversion-channel; Aluminum oxide; Contact resistance; Dielectric devices; Dielectric materials; Indium gallium arsenide; MOSFET circuits; Rapid thermal processing; Thermal stability; Tin; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800726
Filename :
4800726
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982232
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