Title :
High Electron Mobility (2270 cm2/Vsec) In0.53Ga0.47As Inversion Channel N-MOSFETs with ALD ZrO2 Gate Oxide Providing 1 nm EOT
Author :
Koveshnikov, S. ; Goel, N. ; Majhi, P. ; Gaspe, C.K. ; Santos, M.B. ; Oktyabrsky, S. ; Tokranov, V. ; Yakimov, M. ; Kambhampati, R. ; Bakhru, H. ; Zhu, F. ; Lee, J. ; Tsai, W.
Author_Institution :
Intel Corp., Santa Clara, CA
Abstract :
Self-aligned MOSFETs with high-Indium content InGaAs based channel, ultra-thin high-k dielectric and metal gate are attractive devices for logic applications. To be compatible with the future generation CMOS technology, these devices must demonstrate high channel mobility and excellent performance at low operating voltage. Development of a thermally stable I-V/high-k interface with low EOT and low interface state density remains the key challenge for compound semiconductor implementation.
Keywords :
III-V semiconductors; MOSFET; electron mobility; ion implantation; thermal stability; ALD ZrO2 gate oxide; EOT; III-V interface; In0.53Ga0.47As; ZrO2; channel mobility; gate voltage; high electron mobility; high-k dielectric; inversion channel N-MOSFET; ion implantation; metal gate work function; metal gated N-MOSFET; self-aligned N-MOSFET; size 5 nm; thermal stability; threshold voltage; ultra thin oxide; voltage 0.25 V; CMOS logic circuits; CMOS technology; Electron mobility; High K dielectric materials; High-K gate dielectrics; Indium gallium arsenide; Interface states; Logic devices; Low voltage; MOSFETs;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800728
