Title :
Single event burnout as the failure mode for a low voltage MOSFET driver
Author :
Scheick, Leif ; Miyahira, Tetsuo
Abstract :
A MOSFET driver exhibits a destructive single-event effect, after which testing done on the device excludes single-event latch-up as the mechanism but suggests single-event burnout (SEB). SEB is normally not seen in device with such low voltages. The design that optimizes high current density and a fast slew of the part may contribute to the sensitivity of the device to SEB.
Keywords :
MOSFET; failure mode; low voltage MOSFET driver; single event burnout; single-event latch-up; Circuit testing; Current density; Design optimization; Low voltage; MOSFET circuits; Power MOSFET; Power supplies; Protection; Semiconductor diodes; Voltage control;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205568
