• DocumentCode
    2982269
  • Title

    Single event burnout as the failure mode for a low voltage MOSFET driver

  • Author

    Scheick, Leif ; Miyahira, Tetsuo

  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    A MOSFET driver exhibits a destructive single-event effect, after which testing done on the device excludes single-event latch-up as the mechanism but suggests single-event burnout (SEB). SEB is normally not seen in device with such low voltages. The design that optimizes high current density and a fast slew of the part may contribute to the sensitivity of the device to SEB.
  • Keywords
    MOSFET; failure mode; low voltage MOSFET driver; single event burnout; single-event latch-up; Circuit testing; Current density; Design optimization; Low voltage; MOSFET circuits; Power MOSFET; Power supplies; Protection; Semiconductor diodes; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
  • Conference_Location
    Deauville
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4244-1704-9
  • Type

    conf

  • DOI
    10.1109/RADECS.2007.5205568
  • Filename
    5205568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982269