مرکز منطقه ای اطلاع رساني علوم و فناوري - High-f/sub max/ Collector-up AIGaAs/GaAs Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base Fabricated by Oxygen-ion implantation

DocumentCode :

2982276

Title :

High-f/sub max/ Collector-up AIGaAs/GaAs Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base Fabricated by Oxygen-ion implantation

Author :

Yamahata, Shoji ; Matsuoka, Yutaka ; Ishibashi, Takayuki

Author_Institution :

NJT LSI Laboratories

fYear :

1992

fDate :

21-24 June 1992

Keywords :

Conference proceedings; Current density; Gallium arsenide; Heterojunction bipolar transistors; Power transistors; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Device Research Conference, 1992. Digest. 50th Annual

Conference_Location :

Cambridge, MA, USA

Type :

conf

DOI :

10.1109/DRC.1992.671881

Filename :

671881

Link To Document :