• DocumentCode
    2982276
  • Title

    High-f/sub max/ Collector-up AIGaAs/GaAs Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base Fabricated by Oxygen-ion implantation

  • Author

    Yamahata, Shoji ; Matsuoka, Yutaka ; Ishibashi, Takayuki

  • Author_Institution
    NJT LSI Laboratories
  • fYear
    1992
  • fDate
    21-24 June 1992
  • Keywords
    Conference proceedings; Current density; Gallium arsenide; Heterojunction bipolar transistors; Power transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1992. Digest. 50th Annual
  • Conference_Location
    Cambridge, MA, USA
  • Type

    conf

  • DOI
    10.1109/DRC.1992.671881
  • Filename
    671881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982276