Title :
The Thermal Accumulated Improvement of a-Si:H Flexible Electronics for AMOLED Application
Author :
Liu, Y.-T. ; Chang, S.T. ; Syu, R.-S. ; Shen, K.-W. ; Lee, M.H.
Author_Institution :
Nat. Taiwan Normal Univ., Taipei
Abstract :
We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.
Keywords :
elemental semiconductors; flexible electronics; heat conduction; organic light emitting diodes; silicon; temperature distribution; thermal conductivity; thin film transistors; AMOLED; TFT device; buffer oxide; flexible electronics operation; heat diffusion; temperature distribution; thermal accumulated improvement; thermal accumulation; thermal conduction layers; thermal conductivity; transient thermal profile; Active matrix organic light emitting diodes; Conducting materials; Flexible electronics; Glass; Plastics; Resistance heating; Substrates; Temperature distribution; Thermal conductivity; Thin film transistors; a-Si:H TFT; stress; thermal condition layers; thermal conductivity;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450177
