The Thermal Accumulated Improvement of a-Si:H Flexible Electronics for AMOLED Application

Author

Liu, Y.-T. ; Chang, S.T. ; Syu, R.-S. ; Shen, K.-W. ; Lee, M.H.

Author_Institution

Nat. Taiwan Normal Univ., Taipei

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

523

Lastpage

526

Abstract

We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si₃N₄, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

Keywords

elemental semiconductors; flexible electronics; heat conduction; organic light emitting diodes; silicon; temperature distribution; thermal conductivity; thin film transistors; AMOLED; TFT device; buffer oxide; flexible electronics operation; heat diffusion; temperature distribution; thermal accumulated improvement; thermal accumulation; thermal conduction layers; thermal conductivity; transient thermal profile; Active matrix organic light emitting diodes; Conducting materials; Flexible electronics; Glass; Plastics; Resistance heating; Substrates; Temperature distribution; Thermal conductivity; Thin film transistors; a-Si:H TFT; stress; thermal condition layers; thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450177

Filename

4450177