Title :
Compact Model for Electric Field at Pinch-Off and Channel Length Shortening in Bulk MOSFET
Author :
Weidemann, Michaela ; Kloes, Alexander ; Iñiguez, Benjamin
Author_Institution :
Univ. of Appl. Sci. Giessen-Friedberg, Giessen
Abstract :
In this paper a new way is presented to calculate the electric field in the pinch-off point in analytical closed-form without the introduction of unphysical fitting parameters. For that the Poisson equation is solved in 2D by conformal mapping technique. Hereof a model for channel length shortening in saturation is derived. The results are in good agreement with numerical results down to an effective channel length of 50 nm.
Keywords :
MOSFET; Poisson equation; conformal mapping; electric fields; semiconductor device models; Poisson equation; bulk MOSFET; channel length shortening effect; conformal mapping technique; electric field model; pinch-off point; size 50 nm; Boundary conditions; Conformal mapping; Laplace equations; MOS devices; MOSFET circuits; Poisson equations; Sheet materials; Silicon; Space charge;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450179
