DocumentCode
2982348
Title
Compact Model for Electric Field at Pinch-Off and Channel Length Shortening in Bulk MOSFET
Author
Weidemann, Michaela ; Kloes, Alexander ; Iñiguez, Benjamin
Author_Institution
Univ. of Appl. Sci. Giessen-Friedberg, Giessen
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
531
Lastpage
534
Abstract
In this paper a new way is presented to calculate the electric field in the pinch-off point in analytical closed-form without the introduction of unphysical fitting parameters. For that the Poisson equation is solved in 2D by conformal mapping technique. Hereof a model for channel length shortening in saturation is derived. The results are in good agreement with numerical results down to an effective channel length of 50 nm.
Keywords
MOSFET; Poisson equation; conformal mapping; electric fields; semiconductor device models; Poisson equation; bulk MOSFET; channel length shortening effect; conformal mapping technique; electric field model; pinch-off point; size 50 nm; Boundary conditions; Conformal mapping; Laplace equations; MOS devices; MOSFET circuits; Poisson equations; Sheet materials; Silicon; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450179
Filename
4450179
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