Study and Design of the Dual-Band Low Noise Amplifier

Author

Pan, Wu ; Long, Bing ; Ye, Jianhui

Author_Institution

Chongqing Univ. of Posts & Telecommun., Chongqing

fYear

2007

fDate

18-21 April 2007

Firstpage

1

Lastpage

4

Abstract

A dual-band source-inductive-degeneration cascoded low noise amplifier, whose center frequencies are 940 MHz and 2020 MHz respectively, based on common usage of the component independent of the frequency, was investigated and designed in this paper. The interstage mutual coupled inductors provide the required input impedance matching and interstage impedance transformation. The circuit´s reverse isolation for the cascoded LNA is improved. The parallel capacitance between the MOSFET´s gate and source optimize noise factor of the LNA. The matching network design, the noise optimizing were analyzed hereof. The development of LNA and the methods of NF optimization were studied. The designed LNA achieves power gains of 26 dB and 25 dB, and minimum noise figure of 1.1 dB and 2.0 dB, and power of 10.5 mw with 1.5 voltages respectively.

Keywords

MOSFET circuits; circuit noise; impedance matching; inductors; low noise amplifiers; wideband amplifiers; MOSFET gate; cascoded low noise amplifier; dual-band low noise amplifier; gain 25 dB; gain 26 dB; impedance matching; interstage impedance transformation; interstage mutual coupled inductors; matching network design; noise figure 1.1 dB; noise figure 2.0 dB; power 10.5 mW; reverse isolation; source-inductive-degeneration low noise amplifier; voltage 1.5 V; Capacitance; Circuit noise; Coupling circuits; Design optimization; Dual band; Frequency; Impedance matching; Inductors; Low-noise amplifiers; Mutual coupling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on

Conference_Location

Builin

Print_ISBN

1-4244-1049-5

Electronic_ISBN

1-4244-1049-5

Type

conf

DOI

10.1109/ICMMT.2007.381399

Filename

4266158