Title :
Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications
Author :
Najafizadeh, Laleh ; Sutton, Akil K. ; Jun, Bongim ; Cressler, John D. ; Vo, Tuan ; Momeni, Omeed ; Mojarradi, Mohammad ; Ulaganathan, Chandradevi ; Chen, Suheng ; Blalock, Benjamin J. ; Yao, Yuan ; Yu, Xuefeng ; Dai, Foster ; Marshall, Paul W. ; Marshall
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The effects of proton irradiation on the performance of key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform and intended for emerging lunar missions are presented. High-voltage (HV) transistors, SiGe bandgap reference (BGR) circuits, a general-purpose high input impedance operational amplifier (op amp), and a 12-bit digital-to-analog converter (DAC) are investigated. The circuits were designed and implemented in a first-generation SiGe BiCMOS technology and were irradiated with 63 MeV protons. The degradation due to proton fluence in each device and circuit was found to be minor, suggesting that SiGe HBT BiCMOS technology could be a robust platform for building electronic components intended for operation under extreme environments.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; digital-analogue conversion; heterojunction bipolar transistors; integrated circuit design; mixed analogue-digital integrated circuits; operational amplifiers; proton effects; radiation hardening (electronics); reference circuits; semiconductor materials; space vehicle electronics; BiCMOS mixed-signal circuits; HBT technology; IC design platform; SiGe; bandgap reference circuits; digital-to-analog converter; electron volt energy 63 MeV; emerging lunar missions; general-purpose high input impedance operational amplifier; high-voltage transistors; proton irradiation effects; radiation response; BiCMOS integrated circuits; Degradation; Digital-analog conversion; Germanium silicon alloys; Impedance; Moon; Operational amplifiers; Photonic band gap; Protons; Silicon germanium; About four key words or phrases in alphabetical order; separated by commas;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205572
