A New Equivalent Circuit Model of MIM Capacitor for RFIC

Author

Lintao, Liu ; Jinxiang, Wang ; Lai, Feng-Chang

Author_Institution

Harbin Inst. of Technol., Harbin

fYear

2007

fDate

18-21 April 2007

Firstpage

1

Lastpage

3

Abstract

A new scalable Metal-Insulator-Metal (MIM) capacitor model is presented for RF (Radio Frequency) applications. Four MIM capacitors were fabricated in 0.13 U m CMOS technology. Using physical analysis based on the new model, parameter optimization and curve fitting, the scaling rules are given for all elements on the circuit model. The model fits very well with the measured data in the frequency range 500 MHz-10.01 GHz. The results show that the proposed model provides accurate results, while retaining the physical properties of every element in the model.

Keywords

CMOS integrated circuits; MIM devices; capacitors; equivalent circuits; integrated circuit modelling; radiofrequency integrated circuits; CMOS technology; MIM capacitor; RFIC; curve fitting; equivalent circuit model; frequency 500 MHz to 10.01 GHz; metal-insulator-metal capacitor model; parameter optimization; size 0.13 mum; CMOS technology; Curve fitting; Equivalent circuits; Integrated circuit measurements; MIM capacitors; Metal-insulator structures; Radio frequency; Radiofrequency integrated circuits; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on

Conference_Location

Builin

Print_ISBN

1-4244-1049-5

Electronic_ISBN

1-4244-1049-5

Type

conf

DOI

10.1109/ICMMT.2007.381401

Filename

4266160