• DocumentCode
    2982407
  • Title

    Improved 150°C Retention in Hf0.3O0.5N0.2 Memory Device with Low Voltage and Fast Writing

  • Author

    Lin, S.H. ; Yang, H.J. ; Kao, H.L. ; Yeh, F.S. ; Chin, Albert

  • Author_Institution
    E.E. Dept., Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    At 150degC under a fast 100 mus and low plusmn9 V P/E voltage, the [TaN-Ir3Si]-HfAlO-LaAlO3-Hf0.3O0.5N0.2-HfAlO-SiO2-Si memory device shows good device integrity of a 3.2 V initial DeltaVth and 2.4 V 10-year extrapolated retention. This only 25% retention decay at 150degC was achieved by double quantum barriers confining trapped carriers in deep Hf0.3O0.5N0.2 well.
  • Keywords
    hafnium compounds; low-power electronics; semiconductor storage; Hf0.3O0.5N0.2; double quantum barriers; extrapolated retention; fast writing; low voltage; memory device; retention decay; temperature 150 degC; time 100 mus; trapped carriers; voltage 2.4 V; voltage 3.2 V; Carrier confinement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Lead compounds; MONOS devices; Network address translation; Nonvolatile memory; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800734
  • Filename
    4800734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982407