Title :
Multi-bit functional NOR type SONOS memories
Author :
Moonkyung Kim ; Kim, Moonkyung ; Jo-Won Lee ; Tiwari, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
Abstract :
We show that nearly 90 electrons can be stored at 30 nm dimensions of memory nodes, sufficient for reproducibility with having multi-bit memory windows, and that a minimum of tunneling oxide thickness is required to assure reliable retention characteristics. This work has achieved ultra-low number of electron storage while achieving high threshold shifts and demonstrates predictability through self-consistent modeling of programming and erasure characteristics.
Keywords :
electron beam lithography; elemental semiconductors; logic arrays; logic gates; photolithography; semiconductor storage; semiconductor-insulator-semiconductor devices; silicon; silicon-on-insulator; transmission electron microscopy; tunnelling; NOR type silicon-oxide-nitride-oxide-silicon memory arrays; SOI substrates; TEM; charge storage dynamics; electron-beam lithography; error margins; mixed-mode lithography; multi-bit functional NOR type SONOS memories; multi-bit memory characteristics; multi-bit programming characteristic; multiple charge trapping layers; optical lithography; retention characteristics; size 30 nm; size 31 nm; size 34 nm; size 9.3 nm; threshold voltage shift relation; time 1 ms; time 1 mus; time 10 mus; time 10 year; time 100 ms; transmission-electron microscopy; triangular potential a barrier; tunneling probability; voltage -18 V; voltage 13 V; voltage 5 V to 19 V; Carrier confinement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MONOS devices; Network address translation; Nonvolatile memory; SONOS devices; Temperature; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800735
