Investigation of Electrostatic Charges Trapping during 12-Inch Deep Submicron VLSI Proces

As semiconductor substrate wafer size and the manufacturing process steps are continuous to increase, several reliability concerns will become more important. This investigation considers in detail a defect called "silicon substrate damaged defects" and also introduces these defects\´ forming mechanisms and their root causes. The data of surface charge analyzer (SCA) measurement reveal that the electrostatic charges distribute on the wafer surface at the edge location thus attracting the carbon content of organic vapor during manufacturing process and resulting in defects occurring.