Title :
Characterization of Al/SiO2/arbitrarily-doped pp+-Si solar cell
Author :
Shaban, Mahmoud ; El-Sayed, Mohamed Abdel-Gawad
Author_Institution :
Dept. of Electr. Eng., South Valley Univ., Aswan, Egypt
Abstract :
Al/SiO2/pp+-Si metal-insulator-semiconductor (MIS) solar cell device was simulated using a comprehensive numerical model. The semiconductor layer consists of p-type Si epitaxial layer (base) which is deposited on p+-Si(001) substrate. The doping profile in the base layer was chosen to be arbitrary with different doping gradients. The effect of doping profile in the base layer and substrate was studied. The built-in electric filed, generated due to inhomogeneous doping in the base layer, extends deeply inside the base layer as the doping gradient is increased. The performance of the device as a solar cell was optimized at a doping gradient of 5×104 cm-1 and a substrate doping density of 1×1017 cm-3. The simulation results suggest that MIS solar cells performance can be improved by the inhomogeneous impurity distribution inside the base layer.
Keywords :
MIS devices; aluminium; doping profiles; elemental semiconductors; silicon; silicon compounds; solar cells; Al-SiO2-Si; doping gradient; metal-insulator-semiconductor solar cell device; numerical model; p-type epitaxial layer; semiconductor layer; substrate doping density; Doping; Insulators; Interface states; Metals; Performance evaluation; Photovoltaic cells; Substrates; Al/SiO2/pp+-Si; MIS devices; doping gradient; solar cell; tunneling current;
Conference_Titel :
GCC Conference and Exhibition (GCC), 2011 IEEE
Conference_Location :
Dubai
Print_ISBN :
978-1-61284-118-2
DOI :
10.1109/IEEEGCC.2011.5752572
