Title :
Gate-First Low Vt Al/TaN/Ir/HfLaO p-MOSFET Using Simple Laser Annealing
Author :
Su, N.C. ; Wu, C.H. ; Chang, M.F. ; Huang, J.Z. ; Wang, S.J. ; Lee, W.C. ; Lee, P.T. ; Kao, H.L. ; Chin, Albert
Author_Institution :
Dept. of EE, Nat. Cheng Kung Univ., Tainan
Abstract :
Using excimer laser annealing and laser-reflective Al-covered gate, the self-aligned, gate-dielectric first and gate-electrode first Al/TaN/Ir/HfLaO p-MOSFET showed low threshold voltage (Vt) of -0.07 V and good peak hole mobility of 86 cm2/V-s at 1.5 nm equivalent-oxide thickness (EOT).
Keywords :
MOSFET; aluminium; hafnium compounds; high-k dielectric thin films; hole mobility; iridium compounds; laser beam annealing; tantalum compounds; Al-TaN-Ir-HfLaO-Si; Si; equivalent-oxide thickness; excimer laser annealing; hole mobility; laser-reflective gate-electrode; p-MOSFET; self-aligned high-k gate-dielectric; size 1.5 nm; voltage -0.07 V; Annealing; Capacitors; Electrodes; Hafnium compounds; High K dielectric materials; High-K gate dielectrics; Laser noise; Lasers and electrooptics; MOSFET circuits; Temperature;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800739
