Title :
A Surface-Potential-Based Non-Charge-Sheet Core Model for Fully Depleted SOI MOSFET
Author :
Zhang, Jian ; He, Jin ; Zhang, Lining ; Zheng, Rui ; Feng, Jie ; Fu, Yue ; Zhang, Xing
Author_Institution :
Peking Univ., Beijing
Abstract :
This paper presents a surface-potential-based non-charge-sheet core model for long-channel fully depleted SOI MOSFET. The formulation starts from a physics-based solution of the surface potential and an analytical non-charge-sheet drain current is provided to describe the fully-depleted SOI MOSFET behavior with the coupling between the front and back interfaces. The model calculation is compared with the numerical simulations, and exact agreement between them is observed for different geometry structures.
Keywords :
MOSFET; silicon-on-insulator; back interfaces; depleted SOI MOSFET; front interfaces; silicon-on-insulator; surface-potential-based non-charge-sheet core model; Circuit testing; Coupling circuits; Geometry; Helium; Isolation technology; Iterative methods; MOSFET circuits; Numerical simulation; Predictive models; Solid modeling; SOI MOSFET; device physics; non-charge-sheet model; surface potential;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450188
