Continuous Surface Potential versus Voltage Equation of Undoped Surrounding-Gate MOSFETs and Its Solution

Author

Zheng, Rui ; He, Jin ; Zhang, Lining ; Zhang, Jian ; Fu, Yue ; Zhang, Xing

Author_Institution

Peking Univ., Beijing

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

573

Lastpage

576

Abstract

A continuous surface potential versus voltage equation is presented and its solution is discussed for long channel undoped (lightly doped) surrounding-gate (SRG) MOSFETs from accumulation to strong inversion region. The equation is derived from the exact solution of a simplified Poisson´s equation and then amended from the mathematic condition of continuity, which allows the surface potential and the related derivatives to be accurately and continuously described in the whole operation region. The dependences of surface potential characteristics on device geometry and temperature are analyzed and the results agree with the 3-D simulation, proving the accuracy of the presented equation and its solution for SRG compact modelling development.

Keywords

MOSFET; Poisson distribution; Poisson equation; continuous surface potential; surrounding-gate MOSFET; voltage equation; Electrostatics; Geometry; Helium; MOSFETs; Mathematics; Physics; Poisson equations; Solid modeling; Temperature dependence; Voltage; Non-classical CMOS; accuracy; continuity issue; device physics; surface potential; surrounding-gate MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450189

Filename

4450189