DocumentCode :
2982611
Title :
Total dose effects on error rates in linear bipolar systems
Author :
Buchner, Stephen ; McMorrow, Dale ; Bernard, Muriel ; Roche, Nicolas ; Dusseau, Laurent
Author_Institution :
Perot Syst. Gov. Services, NASA Goddard Space Flight Center, Greenbelt, MD, USA
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
1
Lastpage :
8
Abstract :
The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect the Single Event Transient (SET) system error rates in a radiation environment. If the transients are broadened by total ionizing dose (TID) exposure, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.
Keywords :
bipolar analogue integrated circuits; error statistics; linear bipolar circuits; single event transients; system error rates; total dose effects; total ionizing dose exposure; Circuits; Degradation; Energy measurement; Error analysis; Ionizing radiation; Operational amplifiers; Protons; Pulse measurements; Shape; Voltage; Bipolar circuit; error rate; single event transient; total dose;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
ISSN :
0379-6566
Print_ISBN :
978-1-4244-1704-9
Type :
conf
DOI :
10.1109/RADECS.2007.5205581
Filename :
5205581
Link To Document :
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