DocumentCode
2982611
Title
Total dose effects on error rates in linear bipolar systems
Author
Buchner, Stephen ; McMorrow, Dale ; Bernard, Muriel ; Roche, Nicolas ; Dusseau, Laurent
Author_Institution
Perot Syst. Gov. Services, NASA Goddard Space Flight Center, Greenbelt, MD, USA
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
1
Lastpage
8
Abstract
The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect the Single Event Transient (SET) system error rates in a radiation environment. If the transients are broadened by total ionizing dose (TID) exposure, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.
Keywords
bipolar analogue integrated circuits; error statistics; linear bipolar circuits; single event transients; system error rates; total dose effects; total ionizing dose exposure; Circuits; Degradation; Energy measurement; Error analysis; Ionizing radiation; Operational amplifiers; Protons; Pulse measurements; Shape; Voltage; Bipolar circuit; error rate; single event transient; total dose;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location
Deauville
ISSN
0379-6566
Print_ISBN
978-1-4244-1704-9
Type
conf
DOI
10.1109/RADECS.2007.5205581
Filename
5205581
Link To Document