Title :
Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration
Author :
Sandow, C. ; Knoch, J. ; Urban, C. ; Mantl, S.
Author_Institution :
IBN-1, Forschungszentrum Julich GmbH, Julich
Abstract :
For the first time, we investigated the impact of varying doping concentration and gate oxide thickness on the performance of band-to-band tunneling transistors. The output saturation current revealed a strong dependence on both parameters. Consequently, we were able to improve the saturation current by nearly a factor of 50.
Keywords :
doping; tunnel transistors; tunnelling; band-to-band tunneling transistors; dopant concentration; gate oxide tuning; output saturation current; Boron; Doping profiles; Electrostatics; Laboratories; Mobile computing; Photonic band gap; Scattering; Semiconductor process modeling; Transistors; Tunneling;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800743
