Title :
Inversion n-channel GaN MOSFETs with atomic-layer-deposited A12O3 as gate dielectrics
Author :
Chang, Y.C. ; Chang, W.H. ; Chiu, H.C. ; Shiu, K.H. ; Lee, C.H. ; Hong, M. ; Kwo, J. ; Hong, J.M. ; Tsai, C.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
In this paper, inversion n-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a high k gate dielectric is demonstrated for the first time electrical performance close to those of the silicon based MOSFET. Device performance are markedly improved compared to the previous results of GaN MOSFETs with high k dielectrics.
Keywords :
III-V semiconductors; MOSFET; alumina; atomic layer deposition; gallium compounds; high-k dielectric thin films; semiconductor device models; ALD; GaN-Al2O3; atomic-layer-deposition; device electrical performance; high k gate dielectrics; inversion n-channel MOSFET device performance; silicon based MOSFET comparison; Atomic measurements; CMOS technology; Dielectric devices; Gallium nitride; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Photonic band gap; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800744
