Title :
Misalignment of the Block Oxide Height in Self-aligned Source/Drain-tied bFDSOI-FET
Author :
Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Kao, Kung-Kai ; Huang, Hau-Yuan ; Lin, Jeng-Da ; Kang, Shiang-Shi ; Lin, Po-Hsieh
Author_Institution :
Nat. Sun Yat-Sen Univ., Yat-Sen
Abstract :
This paper aims to comprehensively examine the electrical characteristics of a new silicon-on-insulator (SOI) device structure with source/drain (S/D) tie as a function of the block oxide height. According to the 2-D simulations, the height of the block oxide enclosing the silicon body is one of the key parameters for determining the device properties and their fluctuations. Additionally, the self-heating effects (SHEs) can be well controlled chiefly due to the presence of the S/D-tied scheme.
Keywords :
field effect transistors; heating; silicon-on-insulator; block oxide height; self-aligned source-drain-tied bFDSOI-FET; self-heating effects; silicon-on-insulator device structure; CMOS technology; Dry etching; Electric variables; Fluctuations; MOSFET circuits; Pattern recognition; Planarization; Semiconductor films; Silicon on insulator technology; Thermal factors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450191
