• DocumentCode
    2982660
  • Title

    The Mechanism of the Negative Vfb Shift by Capping a Thin Layer of Me2O3 (Me=Gd, Y or Dy)

  • Author

    Zhang, Manhong ; Zhu, Feng ; Kim, Hyoung-Sub ; Zhao, Han ; Ok, Injo ; Lee, Jack C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    The large negative Vfb shift by capping a thin layer of Me2O3 (Me= Gd, Y or Dy) on SiO2 and HfO2 with TaN metal gate was investigated. It was found that the negative Vfb shift is due to the dipole formation at MeSiO-SiO2 interface. The local bonding asymmetry is proposed to be the underlying reason for the dipole formation.
  • Keywords
    MOSFET; bonds (chemical); dysprosium compounds; gadolinium compounds; hafnium compounds; high-k dielectric thin films; interface phenomena; silicon compounds; yttrium compounds; Dy2O3; Gd2O3; HfO2; SiO2; TaN; Y2O3; capping layer; dipole formation; local bonding asymmetry; metal gate; negative Vfb shift; Bonding; Channel bank filters; Hafnium oxide; High-K gate dielectrics; Lifting equipment; MOSFETs; Thickness control; Threshold voltage; Tin; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800746
  • Filename
    4800746
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982660