DocumentCode :
2982660
Title :
The Mechanism of the Negative Vfb Shift by Capping a Thin Layer of Me2O3 (Me=Gd, Y or Dy)
Author :
Zhang, Manhong ; Zhu, Feng ; Kim, Hyoung-Sub ; Zhao, Han ; Ok, Injo ; Lee, Jack C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
85
Lastpage :
86
Abstract :
The large negative Vfb shift by capping a thin layer of Me2O3 (Me= Gd, Y or Dy) on SiO2 and HfO2 with TaN metal gate was investigated. It was found that the negative Vfb shift is due to the dipole formation at MeSiO-SiO2 interface. The local bonding asymmetry is proposed to be the underlying reason for the dipole formation.
Keywords :
MOSFET; bonds (chemical); dysprosium compounds; gadolinium compounds; hafnium compounds; high-k dielectric thin films; interface phenomena; silicon compounds; yttrium compounds; Dy2O3; Gd2O3; HfO2; SiO2; TaN; Y2O3; capping layer; dipole formation; local bonding asymmetry; metal gate; negative Vfb shift; Bonding; Channel bank filters; Hafnium oxide; High-K gate dielectrics; Lifting equipment; MOSFETs; Thickness control; Threshold voltage; Tin; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800746
Filename :
4800746
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982660
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