DocumentCode :
2982675
Title :
Low Dit optimized Interfacial Layer using High-Density Plasma Oxidation and Nitridation in Germanium High-κ Gate stack
Author :
Thareja, Gaurav ; Kobayashi, Masaharu ; Oshima, Yasuhiro ; McVittie, James ; Griffin, Peter ; Nishi, Yoshio
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
87
Lastpage :
88
Abstract :
Low Dit interfacial GeOx, and GeOxNy are grown on Germanium using high density slot plane antenna (SPA) plasma oxidation and nitridation respectively. Excellent MOS characteristics are demonstrated for the Ge high-kappa gate stack with interfacial GeOx, and GeOxNy. GeOx interfacial layer significantly reduced interface state density (Dit) to as low as 3times1011 cm-2 eV-1.
Keywords :
germanium compounds; nitridation; oxidation; slot antennas; GeO; GeON; germanium high-kappa gate stack; high-density plasma nitridation; high-density plasma oxidation; optimized interfacial layer; slot plane antenna; Capacitance-voltage characteristics; Frequency; Germanium; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Oxidation; Plasma measurements; Plasma properties; Plasma temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800747
Filename :
4800747
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982675
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