DocumentCode :
2982687
Title :
Carbon-doped InGaP/GaAs/InGaP Double Heterojunction Bipolar Transistors
Author :
Chen, Y.K. ; Kapre, R. ; Tsang, W.T. ; Wu, M.C.
Author_Institution :
AT&T Bell Laboratories
fYear :
1992
fDate :
21-24 June 1992
Keywords :
Carbon dioxide; Chemicals; DH-HEMTs; Doping; Double heterojunction bipolar transistors; Electrons; Gallium arsenide; Laboratories; Photonic band gap; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
Type :
conf
DOI :
10.1109/DRC.1992.671883
Filename :
671883
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982687
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