• DocumentCode
    2982687
  • Title

    Carbon-doped InGaP/GaAs/InGaP Double Heterojunction Bipolar Transistors

  • Author

    Chen, Y.K. ; Kapre, R. ; Tsang, W.T. ; Wu, M.C.

  • Author_Institution
    AT&T Bell Laboratories
  • fYear
    1992
  • fDate
    21-24 June 1992
  • Keywords
    Carbon dioxide; Chemicals; DH-HEMTs; Doping; Double heterojunction bipolar transistors; Electrons; Gallium arsenide; Laboratories; Photonic band gap; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 1992. Digest. 50th Annual
  • Conference_Location
    Cambridge, MA, USA
  • Type

    conf

  • DOI
    10.1109/DRC.1992.671883
  • Filename
    671883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982687