DocumentCode
2982701
Title
A New Two-dimensional Model for Dual Material Surrounding-Gate (DMSG) MOSFET´s
Author
Chiang, T.K. ; Chen, M.L. ; Wang, H.K.
Author_Institution
Southern Taiwan Univ., Tainan
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
597
Lastpage
600
Abstract
On the basis of resultant solution of two dimensional Poisson´s equation, a new two-dimensional model including channel potential, threshold voltage, and subthreshold swing for the dual material surrounding-gate (DMSG) MOSFETs is successfully developed. The model is verified by the simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance for the DMSG MOSFET´s.
Keywords
MOSFET; Poisson equation; semiconductor device models; 2D Poisson´s equation; 2D model; channel potential; dual material surrounding-gate MOSFETs; subthreshold swing; threshold voltage; Analytical models; CMOS technology; MOSFETs; Physics; Poisson equations; Semiconductor device modeling; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450195
Filename
4450195
Link To Document