DocumentCode
2982723
Title
Self-Consistent Modeling of Ultra Thin Body Double Gate MOSFET
Author
Alam, M.K. ; Khosru, Quazi D M
Author_Institution
Bangladesh Univ. of Eng. & Technol., Dhaka
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
601
Lastpage
604
Abstract
An accurate and efficient one dimensional self-consistent numerical model of double gate MOS structure is presented based on finite element method. The model is developed using FEMLAB considering wave function penetration effect into gate oxide. Hence, penetration effect is revealed and presented for full depleted double gate MOSFET. Accuracy of the model has been verified by comparing with established results.
Keywords
MOS integrated circuits; finite element analysis; wave functions; FEMLAB; double gate MOS structure; self-consistent numerical modeling; ultrathin body double gate MOSFET; wave function penetration effect; Boundary conditions; CMOS process; Equations; Finite element methods; MOS devices; MOSFET circuits; Mathematical model; Numerical models; Quantum mechanics; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450196
Filename
4450196
Link To Document