DocumentCode :
2982739
Title :
Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A12O3 as Gate Dielectric
Author :
Ye, P.D. ; Xuan, Y. ; Wu, Y.Q. ; Shen, T. ; Pal, H. ; Varghese, D. ; Alam, M.A. ; Lundstrom, M.S. ; Wang, W.K. ; Hwang, J. C M ; Antoniadis, D.A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
93
Lastpage :
94
Abstract :
In this paper, high-performance inversion-type E-mode In0.53Ga0.47As and In0.65Ga0.35As MOSFETs with ALD Al2O3 as gate dielectric is demonstrated and systematically studied their subthreshold or weak inversion characteristics. Much more works are needed to make this novel device structure a competitive technology for ultimate CMOS at 22 nm node or beyond. The work is supported by National Science Foundation and SRC FCRP MSD Center.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; alumina; atomic layer deposition; dielectric materials; gallium arsenide; indium compounds; semiconductor device models; ALD; CMOS technology; In0.53Ga0.47As-Al2O3; In0.65Ga0.35As-Al2O3; National Science Foundation; alumina; atomic layer deposition; gate dielectrics; high-performance inversion-type E-mode NMOSFET; size 22 nm; weak inversion characteristics; Application software; CMOS technology; Computer science; Dielectrics; Electrons; III-V semiconductor materials; Indium gallium arsenide; Logic devices; MOSFETs; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800750
Filename :
4800750
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982739
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