Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A12O3 as Gate Dielectric

Author

Ye, P.D. ; Xuan, Y. ; Wu, Y.Q. ; Shen, T. ; Pal, H. ; Varghese, D. ; Alam, M.A. ; Lundstrom, M.S. ; Wang, W.K. ; Hwang, J. C M ; Antoniadis, D.A.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN

fYear

2008

fDate

23-25 June 2008

Firstpage

93

Lastpage

94

Abstract

In this paper, high-performance inversion-type E-mode In_0.53Ga_0.47As and In_0.65Ga_0.35As MOSFETs with ALD Al₂O₃ as gate dielectric is demonstrated and systematically studied their subthreshold or weak inversion characteristics. Much more works are needed to make this novel device structure a competitive technology for ultimate CMOS at 22 nm node or beyond. The work is supported by National Science Foundation and SRC FCRP MSD Center.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; alumina; atomic layer deposition; dielectric materials; gallium arsenide; indium compounds; semiconductor device models; ALD; CMOS technology; In_0.53Ga_0.47As-Al₂O₃; In_0.65Ga_0.35As-Al₂O₃; National Science Foundation; alumina; atomic layer deposition; gate dielectrics; high-performance inversion-type E-mode NMOSFET; size 22 nm; weak inversion characteristics; Application software; CMOS technology; Computer science; Dielectrics; Electrons; III-V semiconductor materials; Indium gallium arsenide; Logic devices; MOSFETs; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2008

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-4244-1942-5

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2008.4800750

Filename

4800750