• DocumentCode
    2982853
  • Title

    Anodization process of aluminum microelectrode for a single-electron transistor operating at room temperature

  • Author

    Muto, Tsuyoshi ; Kimura, Yasuo ; Niwano, Michio

  • Author_Institution
    Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    A technology for fabricating nanostructures has been extensively studied in order to develop electronic or photonic devices based on new types of mechanisms such as quantum effects. There are generally two complementary approaches to fabrication of nanostructures. One is a top-down process as typified by a lithography technique widely used in LSI technology and the other is a bottom-up process such as a self-organization process. In the case of the conventional lithography technique, it is not easy to fabricate nanostructures although it is suitable for controlling their positions. In contrast, a self-organization process does not control positions of nanostructures though it can easily produce nanostructures. Therefore, it is important to develop a hybrid technique of these complementary techniques.
  • Keywords
    aluminium; anodisation; lithography; microelectrodes; nanotechnology; single electron transistors; Al; aluminum microelectrode; anodization process; lithography technique; nanostructure; self-organization process; single-electron transistor; Aluminum; Fabrication; Large scale integration; Lithography; Microelectrodes; Nanostructures; Photonics; Process control; Single electron transistors; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800755
  • Filename
    4800755