DocumentCode
2982853
Title
Anodization process of aluminum microelectrode for a single-electron transistor operating at room temperature
Author
Muto, Tsuyoshi ; Kimura, Yasuo ; Niwano, Michio
Author_Institution
Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai
fYear
2008
fDate
23-25 June 2008
Firstpage
103
Lastpage
104
Abstract
A technology for fabricating nanostructures has been extensively studied in order to develop electronic or photonic devices based on new types of mechanisms such as quantum effects. There are generally two complementary approaches to fabrication of nanostructures. One is a top-down process as typified by a lithography technique widely used in LSI technology and the other is a bottom-up process such as a self-organization process. In the case of the conventional lithography technique, it is not easy to fabricate nanostructures although it is suitable for controlling their positions. In contrast, a self-organization process does not control positions of nanostructures though it can easily produce nanostructures. Therefore, it is important to develop a hybrid technique of these complementary techniques.
Keywords
aluminium; anodisation; lithography; microelectrodes; nanotechnology; single electron transistors; Al; aluminum microelectrode; anodization process; lithography technique; nanostructure; self-organization process; single-electron transistor; Aluminum; Fabrication; Large scale integration; Lithography; Microelectrodes; Nanostructures; Photonics; Process control; Single electron transistors; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800755
Filename
4800755
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