OTP Memory for Low Cost Passive RFID Tags

Author

Lee, Man Chiu ; Barsatan, Randy ; Chan, Mansun

Author_Institution

Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

633

Lastpage

636

Abstract

A CMOS-compatible zero-additional- mask one time programmable (OTP) non-volatile memory (NVM) for passive radio frequency identification (RFID) tags is presented. The selection of anti-fuse (AF) elements is discussed. The high voltage (HV) reliability issue for AF arrays is investigated and a high voltage switch drawing zero DC current is developed to tolerate the high voltages required for programming. Various AF memory cells and the HV switch were fabricated in standard TSMC 0.18 mum process. The breakdown of the AFs has been characterized and the functionality of the HV switch has been verified by measurement.

Keywords

CMOS memory circuits; radiofrequency identification; radiofrequency integrated circuits; random-access storage; AF memory cells; CMOS-compatible zero-additional-mask; OTP memory; TSMC process; anti-fuse elements; high voltage reliability; high voltage switch; one time programmable non-volatile memory; passive RFID Tags; passive radio frequency identification tags; Anodes; CMOS process; Cathodes; Costs; Diodes; Nonvolatile memory; Passive RFID tags; RFID tags; Switches; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450204

Filename

4450204