DocumentCode
2982877
Title
SPICE Model of SiGe HBT with High Resistivity Substrate and its Amplifier Design
Author
Wei-Ming, Yang ; Jian-xin, Chen ; Chen, Shi ; Liu Su-juan
Author_Institution
Hubei Univ., Wuhan
fYear
2007
fDate
18-21 April 2007
Firstpage
1
Lastpage
4
Abstract
The SPICE model parameters of SiGe HBT with high resistivity substrate is extracted. Compared results between measured and simulated data verify that this model is suitable for SiGe HBT DC and AC small-signal characterizations´ representation. Using these extracted SPICE parameters, a two-stage direct-coupled amplifier has been designed and implemented on a Teflon substrate PCB. The simulated results are closed to that of test.
Keywords
Ge-Si alloys; SPICE; bipolar transistor circuits; heterojunction bipolar transistors; integrated circuit design; microwave amplifiers; semiconductor device models; HBT; SPICE model; SPICE parameters extraction; SiGe; Teflon substrate PCB; amplifier design; high resistivity substrate; small-signal characterization; two-stage direct-coupled amplifier; Capacitors; Conductivity; Data mining; Doping; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; SPICE; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on
Conference_Location
Builin
Print_ISBN
1-4244-1049-5
Electronic_ISBN
1-4244-1049-5
Type
conf
DOI
10.1109/ICMMT.2007.381427
Filename
4266186
Link To Document