DocumentCode
2982920
Title
lnGaAs/InP HBTs with a buried subcollector fabricated by selective epitaxy
Author
Frei, M.R. ; Hayes, J.R. ; Song, J.I. ; Caneau, C. ; Bhat, R. ; Cox, H.
Author_Institution
Bellcore
fYear
1992
fDate
21-24 June 1992
Keywords
Capacitance; Epitaxial growth; Etching; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Planarization; Springs; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location
Cambridge, MA, USA
Type
conf
DOI
10.1109/DRC.1992.671884
Filename
671884
Link To Document