Title :
Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress
Author :
Lim, Paul ; Wang, Xinran ; Dai, Hongjie ; Nishi, Yoshio ; Harris, James
Author_Institution :
Center for Integrated Syst., Stanford Univ., Stanford, CA
Abstract :
We have shown that CNT-FETs suffer under hot carrier stress on a similar level to those of conventional silicon FETs, despite its advantage in transport properties. More studies on CNT- FET operating reliability must therefore be conducted before it can be used for practical applications.
Keywords :
1/f noise; carbon nanotubes; field effect transistors; hot carriers; nanotube devices; 1/f noise degradation; carbon nanotube; field effect transistors; hot carrier stress; threshold voltage; CNTFETs; Degradation; FETs; Hot carrier effects; Hot carriers; Physics; Semiconductor device noise; Silicon; Stress; Threshold voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800758
