Title :
Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications?
Author :
Chen, Li ; Pulfrey, D.L.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of British Columbia, Vancouver, BC
Abstract :
This paper presents simulations of fT for short-channel carbon nanotube field-effect transistors (CNFETs). To more accurately account for the propagation velocity in our effective-mass Schrodinger-Poisson solver, an energy-dependent effective mass m*(E) is introduced, but extending it to apply to the entire band structure, rather than only to the bandgap region.
Keywords :
carbon nanotubes; effective mass; energy gap; field effect transistors; nanotube devices; C; Schrodinger-Poisson solver; band structure; bandgap region; carbon nanotube field-effect transistors; energy-dependent effective mass; propagation velocity; short-channel CNFETs; Application software; CNTFETs; Contact resistance; Effective mass; FETs; Fabrication; High performance computing; Nanowires; Photonic band gap; Switches;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800759
