Millimeter-wave characteristics of SiGe heterojunction bipolar transistors and monolithic interconnects in silicon technologies

Author

Zhang, J. ; Jackson, M.K. ; Long, J.R. ; Sadr, S.

Author_Institution

Dept. of Electr. & Comput. Eng., Vancouver Univ., BC, Canada

fYear

2001

fDate

7-7 Feb. 2001

Firstpage

274

Lastpage

275

Abstract

Accurate measurements are needed to validate wideband active and passive models for silicon-based circuits aimed at millimeter-wave applications, such as 40GB/s datacomm and 26-28GHz (LMDS) broadband wireless systems. This wideband characterization of SiGe heterojunction bipolar transistors (HBTs) and interconnects uses a time-resolved, laser-based electro-optic sampling (EOS) technique and numerical de-embedding.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; 26 to 28 GHz; 40 GB/s; SiGe; broadband wireless systems; heterojunction bipolar transistors; laser-based electro-optic sampling; millimeter-wave characteristics; monolithic interconnects; numerical de-embedding; wideband active models; wideband characterization; wideband passive models; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit interconnections; Laser modes; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-6608-5

Type

conf

DOI

10.1109/ISSCC.2001.912635

Filename

912635