• DocumentCode
    2982959
  • Title

    Study of Low-Temperature and Post-Stress Hysteresis in High-k Gate Dielectrics

  • Author

    Wu, You-Lin ; Lin, Shi-Tin ; Yang, Chang Cheng ; Wu, Chien-Hung ; Chin, Albert

  • Author_Institution
    Nat. Chi-Nan Univ., Puli
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    653
  • Lastpage
    656
  • Abstract
    In this work, we present the comparison of hysteresis behaviors of HfAlON and HfSiON high-k dielectrics at low-temperature and subjected to constant voltage stress (CVS). The VFB instability in the HfAlON and HfSiON gate dielectric were deeply studied. A model is proposed to explain the VFB shift and hysteresis direction in thus two samples. We also treat the CVS voltage and CVS time dependence of hysteresis and VFB shift. The decreasing hysteresis with temperature is ascribed to traps generation/recombination rate reduction at low temperature.
  • Keywords
    aluminium compounds; dielectric hysteresis; hafnium compounds; silicon compounds; HfAlON; HfSiON; VFB shift; constant voltage stress; high-k gate dielectrics; low-temperature hysteresis; post-stress hysteresis; Capacitance-voltage characteristics; Channel bank filters; High K dielectric materials; High-K gate dielectrics; Hysteresis; Silicon; Stress; Temperature distribution; Testing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450209
  • Filename
    4450209
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982959