Title :
Study of Low-Temperature and Post-Stress Hysteresis in High-k Gate Dielectrics
Author :
Wu, You-Lin ; Lin, Shi-Tin ; Yang, Chang Cheng ; Wu, Chien-Hung ; Chin, Albert
Author_Institution :
Nat. Chi-Nan Univ., Puli
Abstract :
In this work, we present the comparison of hysteresis behaviors of HfAlON and HfSiON high-k dielectrics at low-temperature and subjected to constant voltage stress (CVS). The VFB instability in the HfAlON and HfSiON gate dielectric were deeply studied. A model is proposed to explain the VFB shift and hysteresis direction in thus two samples. We also treat the CVS voltage and CVS time dependence of hysteresis and VFB shift. The decreasing hysteresis with temperature is ascribed to traps generation/recombination rate reduction at low temperature.
Keywords :
aluminium compounds; dielectric hysteresis; hafnium compounds; silicon compounds; HfAlON; HfSiON; VFB shift; constant voltage stress; high-k gate dielectrics; low-temperature hysteresis; post-stress hysteresis; Capacitance-voltage characteristics; Channel bank filters; High K dielectric materials; High-K gate dielectrics; Hysteresis; Silicon; Stress; Temperature distribution; Testing; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450209
