Title :
0-80GHz 0.15 μm GaAs PHEMT Distributed Amplifier for Optic-Fiber Transmission Systems
Author :
Shuicheng, Cai ; Zhigong, Wang
Author_Institution :
Southeast Univ., Nanjing
Abstract :
In this paper, the available gain of 7.7 dB with bandwidth over 80 GHz distributed amplifier based on OMMIC 0.15 μm GaAs PHEMT is presented. The cascode structure is adopted to enhance the bandwidth and to keep the circuit stability. The circuit includes four cascode cells, and the area of chip is 2.2×0.7 mm2.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit stability; distributed amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit design; millimetre wave amplifiers; optical communication equipment; optical fibre communication; wideband amplifiers; GaAs PHEMT distributed amplifier; OMMIC; bandwidth enhancement; cascode structure; circuit stability; gain 7.7 dB; optic-fiber transmission systems; size 0.7 mm; size 2.2 mm; wavelength 0.15 μm; Bandwidth; Distributed amplifiers; Equivalent circuits; Frequency; Gallium arsenide; Impedance; PHEMTs; Parasitic capacitance; Resistors; Stimulated emission;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on
Conference_Location :
Builin
Print_ISBN :
1-4244-1048-7
Electronic_ISBN :
1-4244-1049-5
DOI :
10.1109/ICMMT.2007.381431
