DocumentCode
2982963
Title
0-80GHz 0.15 μm GaAs PHEMT Distributed Amplifier for Optic-Fiber Transmission Systems
Author
Shuicheng, Cai ; Zhigong, Wang
Author_Institution
Southeast Univ., Nanjing
fYear
2007
fDate
18-21 April 2007
Firstpage
1
Lastpage
3
Abstract
In this paper, the available gain of 7.7 dB with bandwidth over 80 GHz distributed amplifier based on OMMIC 0.15 μm GaAs PHEMT is presented. The cascode structure is adopted to enhance the bandwidth and to keep the circuit stability. The circuit includes four cascode cells, and the area of chip is 2.2×0.7 mm2.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit stability; distributed amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit design; millimetre wave amplifiers; optical communication equipment; optical fibre communication; wideband amplifiers; GaAs PHEMT distributed amplifier; OMMIC; bandwidth enhancement; cascode structure; circuit stability; gain 7.7 dB; optic-fiber transmission systems; size 0.7 mm; size 2.2 mm; wavelength 0.15 μm; Bandwidth; Distributed amplifiers; Equivalent circuits; Frequency; Gallium arsenide; Impedance; PHEMTs; Parasitic capacitance; Resistors; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on
Conference_Location
Builin
Print_ISBN
1-4244-1048-7
Electronic_ISBN
1-4244-1049-5
Type
conf
DOI
10.1109/ICMMT.2007.381431
Filename
4266190
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