Design and Analysis of a Doherty Amplifier for Retrodirective Communication System

Author

Xiaoqun, Chen ; Yuchun, Guo ; Shi Xiaowei

Author_Institution

Xidian Univ., Xi´´an

fYear

2007

fDate

18-21 April 2007

Firstpage

1

Lastpage

4

Abstract

A high efficiency and linearity Doherty power amplifier (DPA) is presented with GaAs field-effect transistor (FET) for its application in retrodirective communication system. By optimizing the bias circuit, power-added efficiency (PAE) is as high as 53.56% while its linear power amplification increases 6 dB greater than the conventional power amplifiers. The simulation results show that the performance of the Doherty power amplifier is better than other power amplifiers in their efficiency, PAE, linearity and inter-modulation distortion (IMD). It is more suitable for retrodirective communication system application. It can be widely used in linearity power amplifier application for microwave retrodirective communication systems.

Keywords

field effect transistors; gallium arsenide; intermodulation distortion; microwave power amplifiers; radiocommunication; Doherty power amplifier; FET; GaAs; bias circuit; field-effect transistor; inter-modulation distortion; linear power amplification; microwave retrodirective communication system; power-added efficiency; Circuits; Communication systems; High power amplifiers; Linearity; Low-noise amplifiers; Microwave amplifiers; Microwave technology; Microwave theory and techniques; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on

Conference_Location

Builin

Print_ISBN

1-4244-1049-5

Electronic_ISBN

1-4244-1049-5

Type

conf

DOI

10.1109/ICMMT.2007.381434

Filename

4266193