DocumentCode
2983021
Title
Analytical Degenerate Carrier Density and Quantum Capacitance for Semiconducting Carbon Nanotubes
Author
Akinwande, Deji ; Liang, Jiale ; Wong, H. S Philip
Author_Institution
Stanford Univ., Stanford, CA
fYear
2008
fDate
23-25 June 2008
Firstpage
117
Lastpage
118
Abstract
Analytical equations are developed for the degenerate carrier density and quantum capacitance with good agreement to numerical computation and experimental data. These results lay the foundation for analytical transport and compact modeling of carbon nanotube (CNT) devices, and for evaluating diameter dependence on electrical performance.
Keywords
capacitance; carbon nanotubes; carrier density; elemental semiconductors; nanotube devices; semiconductor nanotubes; degenerate carrier density; quantum capacitance; semiconducting carbon nanotubes; Capacitance-voltage characteristics; Carbon nanotubes; Charge carrier density; Charge carrier processes; Equations; Numerical simulation; Physics; Quantum capacitance; Quantum computing; Semiconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800762
Filename
4800762
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