Title :
Analytical Degenerate Carrier Density and Quantum Capacitance for Semiconducting Carbon Nanotubes
Author :
Akinwande, Deji ; Liang, Jiale ; Wong, H. S Philip
Author_Institution :
Stanford Univ., Stanford, CA
Abstract :
Analytical equations are developed for the degenerate carrier density and quantum capacitance with good agreement to numerical computation and experimental data. These results lay the foundation for analytical transport and compact modeling of carbon nanotube (CNT) devices, and for evaluating diameter dependence on electrical performance.
Keywords :
capacitance; carbon nanotubes; carrier density; elemental semiconductors; nanotube devices; semiconductor nanotubes; degenerate carrier density; quantum capacitance; semiconducting carbon nanotubes; Capacitance-voltage characteristics; Carbon nanotubes; Charge carrier density; Charge carrier processes; Equations; Numerical simulation; Physics; Quantum capacitance; Quantum computing; Semiconductivity;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800762
