• DocumentCode
    2983042
  • Title

    A fully integrated CMOS RF front-end with on-chip VCO for WCDMA applications

  • Author

    Kyoohyun Lim ; Chan-Hong Park ; Hyung Ki Ahn ; Jae Joon Kim ; Beomsup Kim

  • Author_Institution
    Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
  • fYear
    2001
  • fDate
    7-7 Feb. 2001
  • Firstpage
    286
  • Lastpage
    287
  • Abstract
    Increasing demand on the broadband data transmission via mobile phones drives standards for the third generation cellular phones. Both wide-band CDMA (WCDMA) and CDMA2000 compliant cellular phones make possible full-bandwidth Internet access. A high level of integration is necessary because of low power and low cost requirements, making CMOS implementation attractive. In the WDMA RF receiver, sensitivity, single-tone desensitization, and intermodulation rejection are the key performance indicators and should be minimized by controlling the parameters such as noise figure (NF), input-referred 3/sup rd/-order intercept (IIP3), gain distributions, and voltage-controlled oscillator (VCO) phase noise. Because of the high data rate supported by the WCDMA standard, more stringent control over the parameters is required. An on-chip VCO is helpful, because it eliminates I/O buffers and reduces substrate noise injection and power consumption.
  • Keywords
    CMOS analogue integrated circuits; broadband networks; cellular radio; code division multiple access; radio receivers; telephone sets; voltage-controlled oscillators; CMOS front-end; Internet access; RF receiver; WCDMA; broadband data transmission; mobile phone; on-chip VCO; third-generation cellular phone; Cellular phones; Costs; Data communication; Internet; Mobile handsets; Multiaccess communication; Radio frequency; Voltage control; Voltage-controlled oscillators; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-6608-5
  • Type

    conf

  • DOI
    10.1109/ISSCC.2001.912640
  • Filename
    912640