DocumentCode :
2983055
Title :
High luminance bluish-green organic light-emitting diode based on Coumarin 6 doped into a blue emission layer
Author :
Chang, W.K. ; Yang, S.H. ; Hong, B.C. ; Huang, X.B.
Author_Institution :
Nat. Kaohsiung Univ. of Appl. Sci., Kaohsiung
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
669
Lastpage :
672
Abstract :
In this research, the interface barrier of the lowest unoccupied molecular orbital (LUMO) between LT-N421 and Alq3 layers was reduced by inserting a DPVBi layer. Luminance was enhanced several folds when a DPVBi layer was inserted between LT-N421 and Alq3 layers. Because DPVBi layer not only helped electrons injection into emission layer (EML) but it also blocked holes in the EML to increase the chance of holes and electrons recombination in EML and to improve the luminance of device. Another emphasis of this study was doping Coumarin 6 (C6) green dye in LT-N421, a new blue light-emitting layer. The performance of LT-N421 is better than that of DPVBi. The optimum doping concentration was 0.4 wt% of C6 doped in LT-N421, while the doping concentration of C6 was more than 0.5 wt%, it resulted in aggregation and led to self-quenching. The optimum structure of bluish-green organic light-emitting diode was successfully fabricated based on ITO/NPB (50 nm)/LT-N421:C6 (0.4 wt%, 32 nm)/DPVBi (8 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). The CIE coordinate of the device was (0.22, 0.43) when the maximum luminance was 42400 cd/m2 at 11 V. The current efficiency and power efficiency were 8.83 cd/A at 11 V and 3.96 lm/W at 6 V, respectively.
Keywords :
doping profiles; dyes; electron-hole recombination; molecular electronic states; organic light emitting diodes; Coumarin 6 green dye; ITO:LiF-Al; LT-N421; blue emission layer; doping concentration; electrons injection; high luminance bluish-green organic light-emitting diode; holes-electrons recombination; interface barrier; lowest unoccupied molecular orbital; size 1 nm; size 20 nm; size 200 nm; size 32 nm; size 50 nm; size 8 nm; voltage 11 V; voltage 6 V; Charge carrier processes; Doping; Electroluminescence; Electron emission; Etching; Flat panel displays; Indium tin oxide; Organic light emitting diodes; Organic materials; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450214
Filename :
4450214
Link To Document :
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