Title :
10 GHz GaInP/GaAs HBT Injection-Locked Frequency Divider
Author :
Wei, Huang-Ju ; Meng, Chinchun ; Chang, YuWen ; Huang, Guo-Wei
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequency divider (ILFD) with the stacked transformers is demonstrated at 9.60-10.38 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger voltage swing in the LC tank and increasing locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mW, the locking range is up to 7.8% of the center operating frequency. Compared to other high frequency ILFDs employing a current source as signal injector, the design has a good performance in locking range. The chip size is 1.0 mm times 1.0 mm.
Keywords :
III-V semiconductors; frequency dividers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high-frequency transformers; indium compounds; injection locked oscillators; microwave bipolar transistors; GaInP-GaAs; HBT injection-locked frequency divider; LC lank; center operating frequency; current source; frequency 9.60 GHz to 10.38 GHz; heterojunction bipolar transistor; high frequency ILFDs comparison; inductive coupling; power 20.5 mW; signal injector; size 1.0 mm; stacked transformers; voltage 5 V; voltage swing; Capacitors; Circuit synthesis; Diodes; Flip-flops; Frequency conversion; Frequency synthesizers; Gallium arsenide; Heterojunction bipolar transistors; Resistors; Transformers; GaInP/GaAs HBT; Injection-Loked Divider Frequency; Stacked Transformer;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2007. ICMMT '07. International Conference on
Conference_Location :
Builin
Print_ISBN :
1-4244-1049-5
Electronic_ISBN :
1-4244-1049-5
DOI :
10.1109/ICMMT.2007.381437