A Study of Radiation Hardening Circuit for the Satellite

Author

Liang YuHong

Author_Institution

Sch. of Electr. & Inf. Eng., Hubei Automotive Ind. Inst., Shiyan, China

fYear

2012

fDate

7-9 Dec. 2012

Firstpage

217

Lastpage

219

Abstract

The electrical characteristics of solid state devices, such as BJT (Bipolar Junction Transistor) and MOSFET, are altered by impinging photon radiation and temperature in the space environment. In this paper, firstly, a BJT is tested to γ-radiation and compared with the specifications under the pre-irradiation and the post-irradiation. Secondly, the darlington circuit is designed, which consists of diodes, transistors, and resistors in order to tolerate the worst case and radiation effect. Compared with the interface circuit used in KOMPSAT (Korea Multipurpose Satellite), the darlington circuit achieves performance improvement in the switching time and the output voltage.

Keywords

MOS digital integrated circuits; MOSFET; artificial satellites; bipolar transistors; radiation hardening (electronics); γ-radiation; KOMPSAT; Korea Multipurpose Satellite; MOSFET; bipolar junction transistor; darlington circuit; diodes; photon radiation; radiation hardening circuit; resistors; solid state devices; space environment; Integrated circuit modeling; Photonics; Radiation effects; Satellites; Switches; Switching circuits; Transistors; Radiation effect; Worst case design;

fLanguage

English

Publisher

ieee

Conference_Titel

Control Engineering and Communication Technology (ICCECT), 2012 International Conference on

Conference_Location

Liaoning

Print_ISBN

978-1-4673-4499-9

Type

conf

DOI

10.1109/ICCECT.2012.123

Filename

6413780