Title :
A 900 MHz dual conversion low-IF GSM receiver in 0.35 /spl mu/m CMOS
Author :
Tadjpour, S. ; Cijvat, E. ; Hegazi, E. ; Abidi, A.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
As GSM handsets become a commodity item there is need for highly-integrated, low-cost transceivers, which also dissipate low power. This work focuses on the receiver for 900MHz GSM, which is the more challenging part of the transceiver design. Compared to previous CMOS GSM receivers, this circuit integrates many passive components, dissipates lower power and includes channel selection, image suppression and AGC functions.
Keywords :
CMOS integrated circuits; automatic gain control; cellular radio; channel allocation; radio receivers; telephone sets; 900 MHz; AGC functions; CMOS; GSM receiver; channel selection; dual conversion low-IF receiver; handsets; image suppression; low power; passive components; 1f noise; Band pass filters; Circuits; GSM; Image converters; Inductors; Resistors; Switches; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912643
