A 900 MHz dual conversion low-IF GSM receiver in 0.35 /spl mu/m CMOS

Author

Tadjpour, S. ; Cijvat, E. ; Hegazi, E. ; Abidi, A.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

2001

fDate

7-7 Feb. 2001

Firstpage

292

Lastpage

293

Abstract

As GSM handsets become a commodity item there is need for highly-integrated, low-cost transceivers, which also dissipate low power. This work focuses on the receiver for 900MHz GSM, which is the more challenging part of the transceiver design. Compared to previous CMOS GSM receivers, this circuit integrates many passive components, dissipates lower power and includes channel selection, image suppression and AGC functions.

Keywords

CMOS integrated circuits; automatic gain control; cellular radio; channel allocation; radio receivers; telephone sets; 900 MHz; AGC functions; CMOS; GSM receiver; channel selection; dual conversion low-IF receiver; handsets; image suppression; low power; passive components; 1f noise; Band pass filters; Circuits; GSM; Image converters; Inductors; Resistors; Switches; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-6608-5

Type

conf

DOI

10.1109/ISSCC.2001.912643

Filename

912643

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983082