Title :
A novel 600V structure with Split P-Buried Floating Layer and doping trench
Author :
Tan Kaizhou ; Tang Zhaohuan ; Luo Jun ; Hu Shendong ; Shen Jun ; Cui Wei ; Zhang Jin
Author_Institution :
Nat. Lab. of Analog ICs, Chongqing, China
Abstract :
A novel low on-resistance 600V structure with Split P-Buried Floating Layer(SBFL) and doping trench is proposed and demonstrated by simulation. This novel structure can overcome big reverse leakage current problem of conventional SBFL, and keep its low on-resistance advantage. Its specific on-resistance is 43% less than ideal parallel-plane junction stucture at 600V blocking voltage, from 73.3 mO.cm2 to 41.7 mO.cm2.
Keywords :
buried layers; doping profiles; electric resistance; leakage currents; semiconductor junctions; SBFL; doping trench; on-resistance advantage; reverse leakage current problem; split p-buried floating layer; voltage 600 V; Doping; Electric fields; Epitaxial growth; Junctions; Leakage currents; Semiconductor process modeling; Space charge; buried floating layer; doping trench; on-resistance; reverse leakage current;
Conference_Titel :
TENCON 2013 - 2013 IEEE Region 10 Conference (31194)
Conference_Location :
Xi´an
Print_ISBN :
978-1-4799-2825-5
DOI :
10.1109/TENCON.2013.6718849
