Title :
Design, fabrication, and test of a 125 Mb/s transimpedance amplifier using MOSIS 1.2 μm standard digital CMOS process
Author :
Lee, Myunghee ; Brooke, Martin A.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A front-end transimpedance amplifier for an optical receiver is designed, fabricated through MOSIS 1.2 μm digital CMOS Foundry, and tested. The amplifier meets the specification of FDDI physical layer. Test shows that the bandwidth of the circuit is more than 100 MHz and overall transimpedance gain is about 10,000 Ω with 50 Ω load resistor. Power dissipation is about 20 mW
Keywords :
CMOS analogue integrated circuits; FDDI; digital communication; optical receivers; preamplifiers; wideband amplifiers; 1.2 micron; 100 MHz; 125 Mbit/s; 20 mW; FDDI physical layer specifications; MOSIS; fabrication; front-end amplifier; optical receiver; standard digital CMOS process; testing; transimpedance amplifier; Bandwidth; Circuit testing; FDDI; Foundries; Optical amplifiers; Optical design; Optical device fabrication; Optical receivers; Physical layer; Semiconductor optical amplifiers;
Conference_Titel :
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-7803-2428-5
DOI :
10.1109/MWSCAS.1994.519212
